DG408BP45 데이터 시트보기 (PDF) - Dynex Semiconductor

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DG408BP45

Gate Turn-off Thyristor

Dynex Semiconductor 

25

Conditions:

CS = 1.0µF,

IT = 1000A

20

DG408BP45

15

Tj = 125°C

10

Tj = 25°C

5

10

20

30

40

50

60

Rate of rise of reverse gate current dIGQ/dt - (A/µs)

Fig.21 Gate storage time vs rate of rise of reverse gate current

2.0

Conditions:

CS = 1.0µF,

dIGQ/dt = 30A/µs

1.5

Tj = 125°C

1.0

Tj = 25°C

0.5

0

0

250

500

750

1000

1250

1500

On-state current IT - (A)

Fig.22 Gate fall time vs on-state current

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