NPN Epitaxial Planar Silicon Transistor
FEATUREs
• Large current capacitance.
• Low collector-to-emitter saturation voltage (resistance).
RCE(sat) typ=330mΩ[IC=0.7A, IB=35mA].
• Ultrasmall package facilitates miniaturization in end
products.
• Small ON-resistance (Ron).
APPLICATIONs
• Low-frequency Amplifier, high-speed switching,
small motor drive.