2SJ599 데이터시트 - KEXIN Industrial
제조사
![Kexin](/logo/Kexin.png)
KEXIN Industrial
![Kexin](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
MOS Field Effect Transistor
FEATUREs
Low on-resistance
RDS(on)1=75mΩ MAX. (VGS=-10 V, ID=-10A)
RDS(on)2= 110mΩ MAX. (VGS=-4.0V,ID=-10 A)
Low Ciss:Ciss = 1300 pF TYP.
Built-in gate protection diode
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor ( Rev : V2 )
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial