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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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2SJ557-T2B 데이터시트 - NEC => Renesas Technology

2SJ557 image

부품명
2SJ557-T2B

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8 Pages

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49.4 kB

제조사
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.


FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
   RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
   RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
   RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)


부품명
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제조사
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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