74V2T86CTR 데이터 시트보기 (PDF) - STMicroelectronics
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74V2T86CTR Datasheet PDF : 9 Pages
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74V2T86
DC SPECIFICATIONS
Test Condition
Value
Symbol
Parameter
VIH High Level Input
Voltage
VIL Low Level Input
Voltage
VOH High Level Output
Voltage
VOL Low Level Output
Voltage
II
ICC
ICC
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
VCC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
IO=-50 µA
IO=-8 mA
IO=50 µA
IO=8 mA
VI = 5.5V or GND
5.5 VI = VCC or GND
One Input at 3.4V,
5.5 other input at VCC
or GND
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
2
2
2
V
0.8
0.8
0.8 V
4.4 4.5
4.4
4.4
V
3.94
3.8
3.7
0.0 0.1
0.1
0.1 V
0.36
0.44
0.55
± 0.1
± 1.0
± 1.0 µA
1
10
20 µA
1.35
1.5
1.5 mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3ns)
Test Condition
Value
Symbol
Parameter
VCC CL
(V) (pF)
tPLH Propagation Delay 5.0 (*) 15
tPHL Time
5.0 (*) 50
(*) Voltage range is 5.0V ± 0.5V
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
4.8 7.0 1.0 8.0 1.0 9.0
ns
5.3 7.5 1.0 8.5 1.0 9.5
CAPACITIVE CHARACTERISTICS
Test Condition
Value
Symbol
Parameter
TA = 25°C
-40 to 85°C -55 to 125°C Unit
Min. Typ. Max. Min. Max. Min. Max.
CIN Input Capacitance
4 10
10
10 pF
CPD Power Dissipation
Capacitance
14
pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/2
3/9
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