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BR34L02FV-W 데이터시트 - ROHM Semiconductor

BR34L02FV-W 256×8 bit Electrically Erasable PROM (based on Serial Presence Detect) ROHM
ROHM Semiconductor ROHM
BR34L02FV-W PDF 데이터시트 : BR34L02FV-W pdf   
BR34L02FV-W image

TheBR34L02FV-W is a2kbit EEPROM memory with write-protect function having independent rewrite inhibit area, developed for a DIMM that uses synchronous DRAM memory, and a RIMM that uses RAMBUS DRAM memory. This is a memoryIC that reads ID in order for the Plug & Play feature to operate.

1) 256k registers ×8 bits serial architecture
2) Single power supply(1.8V to 5.5V)
3) Two wire serial interface
4) Page Write Function (16byte)
5) Write Protect Mode
Write protect 1 (One time Rom)  : 00h to 7Fh
Write protect 2 (Hard wire WP PIN)  : 00h to FFh
6) Low Power consumption
Write (5V)  : 1.2mA(Typ.)
Read (5V)  : 0.2mA(Typ.)
Standby(5V)  : 0.1µA (Typ.)
7)DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low VCC
8) Small package - - - - - - SSOP-B8 pin
9) High reliability fine pattern CMOS technology
10) Endurance : 1,000,000 erase/write cycles
11) Dataretention : 40years
12) Filtered inputs in SCL•SDA for noise suppression
13) Initial data FFh in all address

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