datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

P/N + 설명 + 콘텐츠 검색

검색어 :
상세내역 : Schottky Barrier Diode for Mixer and Detector

Schottky Barrier Diode for Mixer and Detector

This Schottky Barrier diode is designed to realize compact and efficient designs. Two Schottky Barrier diodes are incorporated in one SC-59 package. The use of dual Schottky Barrier diodes can reduce both system cost and board space. This Schottky Barrier diode is AEC-Q101 qualified and PPAP capable for automotive applications.

Features
• Series connection of 2 elements in a small-sized package
• Small Interterminal Capacitance (C = 0.69 pF typ)
• Small Forward Voltage (VF = 0.23 V max)
• Pb-Free, Halogen Free and RoHS compliance
• AEC-Q101 qualified and PPAP capable

Typical Applications
• Level Detector for Radio

상세내역 : SURMOUNT™ Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description and Applications
The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion Barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C.
The “ 0502 ” outline allows for Surface Mount placement and multi- functional polarity orientations.
The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.

Features
● Extremely Low Parasitic Capitance and Inductance
● Surface Mountable in Microwave Circuits, No Wirebonds Required
● Rugged HMIC Construction with Polyimide Scratch Protection
● Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16 hours)
● Lower Susceptibility to ESD Damage

상세내역 : Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package

The Schottky POWERMITE® employs the Schottky Barrier principle with a Barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE® has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical.

Features
• Ultra Low VF
• 1st in Marketplace with a 10 VR Schottky Rectifier
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Low Thermal Resistance with Direct Thermal Path of Die on
   Exposed Cathode Heat Sink
• ESD Ratings:
   ♦ Human Body Model > 4000 V (Class 3)
   ♦ Machine Model > 400 V (Class C)
• AEC−Q101 Qualified and PPAP Capable
• NRVB Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements
• All Packages are Pb−Free*

ON-Semiconductor
ON Semiconductor
상세내역 : Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package

The Schottky POWERMITE® employs the Schottky Barrier principle with a Barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE® has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical.

Features
• Ultra Low VF
• 1st in Marketplace with a 10 VR Schottky Rectifier
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Low Thermal Resistance with Direct Thermal Path of Die on
   Exposed Cathode Heat Sink
• ESD Ratings:
   ♦ Human Body Model > 4000 V (Class 3)
   ♦ Machine Model > 400 V (Class C)
• AEC−Q101 Qualified and PPAP Capable
• NRVB Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements
• All Packages are Pb−Free*

상세내역 : Schottky Diode Quad Mixer Chips Supplied on Film Frame

Description
The Skyworks SMS392x-099 family of Si Schottky diodes are configured as ring quads intended for use in double-balanced mixers. Each ring quad die is comprised of four Schottky junctions, connected anode to cathode. There are three Barrier heights available: SMS3926 is composed of low-Barrier diodes, which can be driven with low-power local oscillator signals; SMS3927 is composed of medium-Barrier diodes, for applications in which moderate-power local oscillator signals are available; and, SMS3928 is composed of high-Barrier diodes for applications that require very low distortion performance and have higher local oscillator power available. These ring quads are 100% tested, sawn and supplied on film frame in wafer quantities.

Features
● Designed for high-performance, double-balanced mixers
● Three Barrier heights available
Schottky diodes supplied 100% tested, sawn, mounted on film frame
● Low cost
● Available lead (Pb)-free, RoHS-compliant, and Green

부품명(s) : MBR0520LT1 MBR0520LT3
ONSEMI
ON Semiconductor
상세내역 : Surface Mount Schottky Power Rectifier

Schottky Barrier Rectifier 0.5 AMPERES 20 VOLTS

The Schottky Power Rectifier employs the Schottky Barrier principle with a Barrier metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state–of–the–art devices have the following features:

• Guardring for Stress Protection
• Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C)
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8″
• Package Designed for Optimal Automated Board Assembly

ON-Semiconductor
ON Semiconductor
상세내역 : Surface Mount Schottky Power Rectifier Plastic SOD−123 Package

Schottky Barrier Rectifier 0.5 AMPERES, 20 VOLTS

The Schottky Power Rectifier employs the Schottky Barrier principle with a Barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state−of−the−art devices have the following features:

Features
• Guardring for Stress Protection
• Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C)
• 125°C Operating Junction Temperature
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Package Designed for Optimal Automated Board Assembly
• Pb−Free Packages are Available

ON-Semiconductor
ON Semiconductor
상세내역 : Surface Mount Schottky Power Rectifier

Schottky Barrier Rectifier 1.0 AMPERES, 40 VOLTS

POWERMITE®Power Surface Mount Package

The Schottky Powermite® employs the Schottky Barrier principle with a Barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier.

Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Low VFProvides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
• Pb−Free Packages are Available

부품명(s) : MBR0520LT1 MBR0520LT3
Motorola
Motorola => Freescale
상세내역 : Surface Mount Schottky Power Rectifier

Schottky Barrier Rectifier 0.5 AMPERES 20 VOLTS

The Schottky Power Rectifier employs the Schottky Barrier principle with a Barrier metal that produces optimal forward voltage drop–reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. These state–of–the–art devices have the following features:

• Guardring for Stress Protection
• Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25°C)
• 125°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8″
• Package Designed for Optimal Automated Board Assembly

상세내역 : Schottky Barrier Rectifier 1.0 AMPERES, 20 VOLTS

Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package

The Schottky Powermite® employs the Schottky Barrier principle with a Barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite® has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical.

Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Low VF Provides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
• ESD Ratings: Human Body Model, 3B > 16000 V
                     Machine Model, C > 400 V
• Pb−Free Packages are Available

 

12345678910 Next

All Rights Reserved© datasheetbank.com [ 개인정보 보호정책 ] [ 요청 데이타시트 ][ 제휴문의 ]