P/N + 설명 + 콘텐츠 검색

General Description
Silicon LDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF Power LDMOS transistor

13.0 Watts Single Ended
Package Style S08P

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

General description
150 W LDMOS Power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (2500 MHz to 2700 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF Power amplifiers for base stations and multi carrier applications in the 2500 MHz to
   2700 MHz frequency range

General description
45 W LDMOS Power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA:
    ◆ Average output Power = 1.0 W
    ◆ Gain = 22.5 dB
    ◆ Efficiency = 7.8 %
    ◆ ACPR = −48.5 dBc
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (700 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications
■ RF Power amplifiers for W-CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.

General description
135 W LDMOS Power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA:
    ◆ Average output Power = 26.5 W
    ◆ Power gain = 21.0 dB
    ◆ Efficiency = 28.0 %
    ◆ ACPR = −39 dBc
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (800 MHz to 1000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications
■ RF Power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 800 MHz to 1000 MHz frequency range

General description
110 W LDMOS Power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz,
   a supply voltage of 28 V and an IDq of 900 mA:
   ◆ Average output Power = 25 W
   ◆ Power gain = 19 dB
   ◆ Efficiency = 32 %
   ◆ IMD3 = −34 dBc
   ◆ ACPR = −38 dBc
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF Power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
   multicarrier applications in the 1800 MHz to 2000 MHz frequency range

General description
230 W LDMOS Power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features
■ Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 28 V and an IDq of 2000 mA:
    ◆ Average output Power = 50 W
    ◆ Power gain = 16.5 dB (typ)
    ◆ Efficiency = 29.5 %
    ◆ ACPR = −35 dBc
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1800 MHz to 2000 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)

Applications
■ RF Power amplifiers for W-CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range

General description
A 1400 W extremely rugged LDMOS Power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXPs XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Features and benefits
■ Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an
   IDq of 40 mA, a tp of 100 μs with δ of 20 %:
   ◆ Output Power = 1400 W
   ◆ Power gain = 23.5 dB
   ◆ Efficiency = 69 %
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (HF to 500 MHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ Industrial, scientific and medical applications
■ Broadcast transmitter applications

General description
100 W LDMOS Power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications
■ RF Power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range

General description
130 W LDMOS Power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (2000 MHz to 2200 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent digital pre-distortion capability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ RF Power amplifiers for W-CDMA base stations and multi carrier applications in the
   2000 MHz to 2200 MHz frequency range

General description
A 650 W extremely rugged LDMOS Power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits
■ Easy Power control
■ Integrated ESD protection
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (HF to 600 MHz)
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ Industrial, scientific and medical applications
■ Broadcast transmitter applications