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Introduction
LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher gain, efficiency, linearity, and biasing simpleness that lower the overall system cost and make them attractive for high volume businesses demanding low cost RF Power transistor solutions. Thanks to these advantages, LDMOS RF Power transistors are the proven mainstay in the Power amplifier business of the cellular base station today. The device used for the present characterization, SD57045, an STMicroelectronics product, is a lateral current, double diffused MOS transistor that delivers 45 W under 28 V supply. It is unmatched from DC to 1 Ghz making it eligible for a variety of applications, especially for high performance, low cost FM driver applications. This application note documents the feasibility of a low cost 900 MHz cellular device as a commercial FM driver. The key advantages of LDMOS technology are improved thermal resistance and reduced source output inductance. The wire-bonded connections to the external circuitry (DMOS config.) are no longer required because the source at the chip surface is connected to the substrate by the diffusion of a highly doped p-type region. Consequently, LDMOS has excellent high frequency response because of its high fT and superior gain due to the low feedback capacitance and reduced source inductance. An additional advantage of the LDMOS structure is that beryllium oxide (BeO), a toxic electrical insulator required to isolate the drain with DMOS transistors, is no longer needed. Hence, not only the thermal resistance is improved, but package cost and environmental impact are significantly reduced. Finally, in an LDMOS, the parasitic bipolar has been nullified guaranteeing good ruggedness, efficiency and high current handling capability.

Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in Power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Wolfspeeds advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features
• Asymmetric design
   - Main: 150 W P1dB
   - Peak: 200 W P1dB
• Broadband internal matching
• CW performance at 2350 MHz, 28 V
   - Ouput Power = 250 W P1dB
   - Efficiency = 46%
   - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
   JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant

Description
The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in Power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufactured with Infineons advanced LDMOS process, this device provides excellent thermal performance and superior reliability.

Features
• Asymmetric design
   - Main: 150 W P1dB
   - Peak: 200 W P1dB
• Broadband internal matching
• CW performance at 2350 MHz, 28 V
   - Ouput Power = 250 W P1dB
   - Efficiency = 46%
   - Gain = 16 dB
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
   JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS-compliant

General description
600 W LDMOS pulsed Power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
   voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %:
   ◆ Output Power = 600 W
   ◆ Power gain = 17 dB
   ◆ Efficiency = 52 %
■ Easy Power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1030 MHz to 1090 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)

Applications
■ 600 W LDMOS pulsed Power transistor intended for TCAS and IFF applications in the
   1030 MHz to 1090 MHz frequency range

General description
600 W LDMOS pulsed Power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.

Features and benefits
■ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
   voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %:
   ◆ Output Power = 600 W
   ◆ Power gain = 17 dB
   ◆ Efficiency = 52 %
■ Easy Power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (1030 MHz to 1090 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
   (RoHS)

Applications
■ 600 W LDMOS pulsed Power transistor intended for TCAS and IFF applications in the
   1030 MHz to 1090 MHz frequency range

General description
1000W LDMOS pulsed Power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features and benefits
■ Easy Power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (960 MHz to 1215 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ 1000 W LDMOS pulsed Power transistor intended for Mode-S, TCAS, JTIDS, DME
   and TACAN applications in the 960 MHz to 1215 MHz frequency range

General description
1000W LDMOS pulsed Power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS, JTIDS, DME and TACAN.

Features and benefits
■ Easy Power control
■ Integrated ESD protection
■ High flexibility with respect to pulse formats
■ Excellent ruggedness
■ High efficiency
■ Excellent thermal stability
■ Designed for broadband operation (960 MHz to 1215 MHz)
■ Internally matched for ease of use
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

Applications
■ 1000 W LDMOS pulsed Power transistor intended for Mode-S, TCAS, JTIDS, DME
   and TACAN applications in the 960 MHz to 1215 MHz frequency range

General Description
Silicon LDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others.
"Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF Power LDMOS transistor

13.0 Watts Single Ended
Package Style S08P

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT

Introduction
The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF Power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB Power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry standard package and is capable of delivering a minimum output Power of 30 W, which makes it ideally suited for today’s RF Power amplifier applications.

Features
   Typical performance ratings for GSM EDGE
   (f = 1.840 GHz, POUT = 10 W)
   — Error vector magnitude (EVM): 1.6%
   — Power gain: 15 dB
   — Drain efficiency: 30%
   — Modulation spectrum:
      @ ±400 kHz = –64 dBc.
      @ ±600 kHz = –71 dBc.
   Typical continuous wave (CW) performance over
      entire digital communication system (DCS) band:
   — P1dB: 33 W typical (typ).
   — Power gain: @ P1dB = 14 dB.
   — Efficiency: @ P1dB = 51% typ.
   — Return loss: –12 dB.
   High-reliability, gold-metallization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   30 W minimum output Power.
   Device can withstand 10:1 voltage standing wave
      ratio (VSWR) at 26 Vdc, 1.840 GHz, 30 W CW
      output Power.
   Large signal impedance parameters available.

Introduction
The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF Power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB Power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industry standard package and is capable of delivering a minimum output Power of 45 W, which makes it ideally suited for today’s RF Power amplifier applications.

Features
   Typical performance ratings for GSM EDGE
   (f = 1.840 GHz, POUT = 15 W)
   — Error vector magnitude (EVM): 1.9%
   — Power gain: 15 dB
   — Drain efficiency: 32%
   — Modulation spectrum:
      @ ±400 kHz = –63 dBc.
      @ ±600 kHz = –73 dBc.
   Typical continuous wave (CW) performance over
      entire digital communication system (DCS) band:
   — P1dB: 49 W typical (typ).
   — Power gain: @ P1dB = 14 dB.
   — Efficiency: @ P1dB = 53% typ.
   — Return loss: –12 dB.
   High-reliability, gold-metallization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   45 W minimum output Power.
   Device can withstand 10:1 voltage standing wave
      ratio (VSWR) at 26 Vdc, 1.840 GHz, 45 W CW
      output Power.
   Large signal impedance parameters available.