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상세내역 : IR Enhanced Photo Detectors

Features
• High Break Down Voltage
Low Dark Current
Low Noise
• Fast Rise/Fall Time

Applications)
• Fiber Optics
• Military / Aerospace
• Industrial Controls

HP
HP => Agilent Technologies
상세내역 : High-Performance IR Emitter and IR PIN PhotoDiode in Subminiature SMT Package

Description
Flat Top Package
The HSDL-4400 Series of flat top IR emitters use an untinted, nondiffused, truncated lens to provide a wide radiation pattern that is useful for short distance communication where alignment of the emitter and detector is not critical. The HSDL-5400 Series of flat top IR detectors uses the same truncated lens design as the HSDL-4400 Series of IR emitters with the added feature of a black tint that acts as an optical filter to reduce the effects of ambient light, such as sun, incandescent and fluorescent light from interfering with the IR signal.
   
Features
• Subminiature Flat Top and
    Dome Package
    Size – 2x2 mm
• IR Emitter
    875 nm TS AlGaAs
    Intensity – 17 mW/sr
    Speed – 40 ns
• Wide Range of Drive
    Currents
    500 µA to 500 mA
• IR Detector
    PIN PhotoDiode
    High Sensitivity
    Speed – 7.5 ns
• Flexible Lead
    Configurations
    Surface Mount or
    Through Hole
   
Applications
• Short Distance IR Links
• IrDA Compatible
• Small Handheld Devices
    Pagers
    Industrial Handhelds
• Diffuse LANs
• Wireless Audio
   

상세내역 : High-Performance IR Emitter and IR PIN PhotoDiode in Subminiature SMT Package

Description
Flat Top Package
The HSDL-4400 Series of flat top IR emitters uses an untinted, nondiffused, truncated lens to provide a wide radiation pattern that is useful for short distance communication where alignment of the emitter and detector is not critical. The HSDL-5400 Series of flat top IR detectors uses the same truncated lens design as the HSDL-4400 Series of IR emitters with the added feature of a black tint that acts as an optical filter to reduce the effects of ambient light, such as sun, incandescent and fluorescent light from interfering with the IR signal.
   
Features
• Subminiature flat top and dome package
    Size – 2x2 mm
• IR emitter
    875 nm TS AlGaAs
    Intensity – 17 mW/sr
    Speed – 40 ns
• Wide range of drive currents
    500 µA to 500 mA
• IR detector
    PIN photoDiode
    High sensitivity
    Speed – 7.5 ns
• Flexible lead configurations
    Surface mount or through hole
   
Applications
• Short distance IR links
• IrDA compatible
• Small handheld devices
    Pagers
    Industrial handhelds
• Diffuse LANs
• Wireless audio
   

상세내역 : REMOTE CONTROL ENCODER

DESCRIPTION
The SC5262 is a remote control encoder paired with SC5272 utilizing CMOS technology. It encodes data and address pins into a serial coded waveform suitable for RF or IR modulation. SC5262 has a maximum of 12-bits of tri-state address pins providing up to 531,441(or 312 ) address codes; thereby, drastically reducing any code collision and unauthorized code scanning possibilities.

FEATURES
* Low power consumption and very high noise immunity
* Up to 12 tri-state code address pins or 6 data pins
* Wide operating voltage range(Vcc=3V ~ 15V)
* Single resistor oscillator
* Latch or Momentary output type

APPLICATION
* Home/automation security system
* Remote control toys or for industrial use
* Remote control fan
* Garage door controller

상세내역 : Schottky Barrier Diode for Mixer and Detector

Schottky Barrier Diode for Mixer and Detector

This Schottky Barrier Diode is designed to realize compact and efficient designs. Two Schottky Barrier Diodes are incorporated in one SC-59 package. The use of dual Schottky Barrier Diodes can reduce both system cost and board space. This Schottky Barrier Diode is AEC-Q101 qualified and PPAP capable for automotive applications.

Features
• Series connection of 2 elements in a small-sized package
• Small Interterminal Capacitance (C = 0.69 pF typ)
• Small Forward Voltage (VF = 0.23 V max)
• Pb-Free, Halogen Free and RoHS compliance
• AEC-Q101 qualified and PPAP capable

Typical Applications
• Level Detector for Radio

부품명(s) : ASR8800
AMICC
AMIC Technology
상세내역 : Ambient Light, Solar_UV_Index, IR and Proximity Sensor

General Description
The ASR8800 is an integrated sensor of ambient light (ALS), Infrared light (IR), Solar_UV_Index (SUVI), and proximity sensing (PS) with an IR VCSEL LD (Laser Diode) embedded. It provides innovative algorithms which can be friendly in application. ASR8800 is a perfect solution for light and PS sensing.

Features
■ Ambient Light, Solar_UV_Index, IR and Proximity Sensor
■ Ambient Light (ALS) / IR Sensing
   - ALS closes to human-eye response (UV/IR rejection)
   - IR detecting spectrum in range of near Infrared
   - 12 bits resolution with gain and integration time setting
   - ASC model with 16 bits dynamic range
   - Dynamic rang up to 400K lux under high intensity mode
   - Programmable high/Low threshold interrupt
■ Solar_UV_Index Sensing
   - CIE Erythemal Action Spectrum weighted
   - 11 indexes calculated by 8 bits dynamic output data
■ Proximity Sensing (PS)
   - IR VCSEL LD (Laser Diode) embedded
   - LD driving current 2.5/5/10/15 mA
   - Changeable PS pulse time from 0.05ms to 6.4ms
   - 8 bits effective counts
   - Programmable high/Low threshold interrupt
   - PS Offset to cancel crosstalk without dynamic range loss
   - PS Auto Trim function for precise distance detection
■ User trimming is capable for overlay correction
■ I2C digital Interface up to 400KHz with Interrupt Pin
■ Wait-time range from 0 to 7 seconds to save power
■ 50/60Hz flicker noise rejection
■ VDD = 2.5V to 3.6V
■ Temperature compensation : -40°C to +85°C
Low Power consumption IALS~17uA, IPS+LD~40uA
■ Package option
   - 8-pin OCDFN (3.2mm x 4.2mm x 1.1mm)
   - All Pb-free (Lead-free) Products are RoHS2.0 Compliant

Applications
■ Notebook / Monitor
■ Smart phone (touch screen disable and backlight control)
■ LCD display (backlight control)
■ Table PC
■ PDA
■ Presence Detection
■ Industrial sensor

상세내역 : SURMOUNT™ Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

Description and Applications
The MA4E2508 SurMountä Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form Diodes or via conductors embedded in a glass dielectric, which acts as the Low dispersion, Low loss, microstrip transmission medium. The combination of silicon and glass alLows HMIC devices to have excellent loss and power dissipation characteristics in a Low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very Low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a Lower cost performance solution to conventional devices. They have Lower susceptibility to electrostatic discharge than conventional beam lead Schottky Diodes.
The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion Barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300°C.
The “ 0502 ” outline alLows for Surface Mount placement and multi- functional polarity orientations.
The MA4E2508 Family of SurMount Schottky Diodes are recommended for use in microwave circuits through Ku band frequencies for Lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead Diodes with the corresponding Surmount Diode, which can be connected to a hard or soft substrate circuit with solder.

Features
● Extremely Low Parasitic Capitance and Inductance
● Surface Mountable in Microwave Circuits, No Wirebonds Required
● Rugged HMIC Construction with Polyimide Scratch Protection
● Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16 hours)
Lower Susceptibility to ESD Damage

Silan
Silan Microelectronics
상세내역 : Low IR Schottky Barrier Diode CHIPS

DESCRIPTION
➤ 2SB183060MA  is  a Schottky  Barrier  Diode  chips fabricated in silicon epitaxial planar technology;
➤ Due to special Schottky Barrier structure, the chips have  very  Low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
Low power losses, high efficiency;
➤ Guard ring construction for transient protection;
➤ High ESD capability;
➤ High surge capability;
➤ Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤ Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;

Silan
Silan Microelectronics
상세내역 : Low IR Schottky Barrier Diode CHIPS

DESCRIPTION
➤  2SB183100MA  is  a Schottky  Barrier  Diode  chips fabricated in silicon epitaxial planar technology;
➤  Due to special Schottky Barrier structure, the   chips have  very  Low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
➤  Low power losses, high efficiency;
➤  Guard ring construction for transient protection;
➤  High ESD capability;
➤  High surge capability;
➤  Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤  Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;
➤ Have two top side electrode materials for customer to choose, detail refer to ordering specifications.

Silan
Silan Microelectronics
상세내역 : Low IR Schottky Barrier Diode CHIPS

DESCRIPTION
➤  2SB267100MA  is  a Schottky  Barrier  Diode  chips
   fabricated in silicon epitaxial planar technology;
➤  Due to special Schottky Barrier structure, the   chips
   have  very  Low  reverse  leakage  current  (  typical
   IR=0.002mA@Vr=100V  )  and  maximum  150°C
   operation junction temperature;
➤  Low power losses, high efficiency;
➤  Guard ring construction for transient protection;
➤  High ESD capability;
➤  High surge capability;
➤  Packaged products are widely used in switching
   power suppliers, polarity protection circuits and
   other electronic circuits;
➤  Chip Size: 2670mm X 2670μm;
➤ Chip Thickness: 280±20μm;
➤ Have two top side electrode materials for customer
   to choose, detail refer to ordering specifications.

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