P/N + 설명 + 콘텐츠 검색
부품명(s) : HMG60N60A HMG60N60T
Unspecified
상세내역 : 600V Insulated Gate Bipolar Transistor
부품명(s) : RM20DA-XXS RM20C1A-XXS RM20CA-XXS
MITSUBISHI ELECTRIC
상세내역 : MEDIUM POWER, HIGH FREQUENCY USE Insulated TYPE
부품명(s) : IRG4PC30SPBF
International Rectifier
상세내역 : Insulated Gate Bipolar Transistor Standard Speed IGBT
부품명(s) : IRG4BC40UPBF
International Rectifier
상세내역 : Insulated Gate Bipolar Transistor UltraFast Speed IGBT (Rev - 2004)
부품명(s) : IRG4BC40UPBF
International Rectifier
상세내역 : Insulated Gate Bipolar Transistor UltraFast Speed IGBT
부품명(s) : IRG4PC50FPBF
International Rectifier
상세내역 : Fast Speed IGBT
부품명(s) : SGF40N60UF
Fairchild Semiconductor
상세내역 : Ultra-Fast IGBT
부품명(s) : GP250MHB06S
Dynex Semiconductor
상세내역 : Half Bridge IGBT Module
부품명(s) : G4BC30FD1 IRG4BC30FD1
International Rectifier
상세내역 : Fast CoPack IGBT
부품명(s) : CR20EY
MITSUBISHI ELECTRIC
상세내역 : MEDIUM POWER, INVERTER USE NON-Insulated TYPE, GLASS PASSIVATION TYPE
부품명(s) : SSM28G45EM
Silicon Standard Corp.
상세내역 : N-CHANNEL Insulated-Gate Bipolar Transistor
부품명(s) : SSM25G45EM
Silicon Standard Corp.
상세내역 : N-CHANNEL Insulated-Gate Bipolar Transistor
부품명(s) : QM20TD-H
MITSUBISHI ELECTRIC
상세내역 : MITSUBISHI Transistor MODULES MEDIUM POWER SWITCHING USE Insulated TYPE
부품명(s) : AP25G45GEM
Advanced Power Electronics Corp
상세내역 : N-CHANNEL Insulated Gate Bipolar Transistor
ON Semiconductor
상세내역 : IGBT IN TO–247 14 A @ 90°C 18 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED ON–VOLTAGE
부품명(s) : AP28G40GEO
Advanced Power Electronics Corp
상세내역 : N-CHANNEL Insulated Gate Bipolar Transistor
부품명(s) : QM20TD-HB
MITSUBISHI ELECTRIC
상세내역 : MITSUBISHI Transistor MODULES MEDIUM POWER SWITCHING USE Insulated TYPE