P/N + 설명 + 콘텐츠 검색

Description
• Closed loop (compensation)
   Current Sensor with magnetic
   field probe
• Printed circuit board mounting
• Casing and materials UL-listed

Characteristics
• Excellent accuracy
• Very low offset Current
• Very low temperature dependency and offset
   Current drift
• Very low hysteresis of offset Current
• Short response time
• Wide frequency bandwidth
• Compact design
• Reduced offset ripple

Applications
Mainly used for stationary operation in industrial
applications:
• AC variabel speed drives and servo motor
   drives
• Static converters for for DC motor drives
• Battery supplied applications
• Switched Mode Power Supplies (SMPS)
• Power Supplies for welding applications
• Uninterruptable Power Supllies (UPS)

Description
• Closed loop (compensation)
   Current Sensor with magnetic
   field probe
• Printed circuit board mounting
• Casing and materials UL-listed

Characteristics
• Excellent accuracy
• Very low offset Current
• Very low temperature dependency and offset
   Current drift
• Very low hysteresis of offset Current
• Low response time
• Wide frequency bandwidth
• Compact design
• Reduced offset ripple

Applications
Mainly used for stationary operation in industrial
applications:
• AC variable speed drives and servo motor
   drives
• Static converters for DC motor drives
• Battery supplied applications
• Switched Mode Power Supplies (SMPS)
• Power Supplies for welding applications
• Uninterruptable Power Supplies (UPS)

TOSHIBA CCD Linear Image Sensor CCD (charge coupled device)

The TCD2704D is a high sensitive and low dark Current 7500 elements × 4 line CCD color image Sensor which includes CCD drive circuit, clamp circuit.
The Sensor is designed for scanner. The device contains a row of 7500 elements × 4 line photodiodes which provide a 24 lines/mm across a A3 size paper. The device is operated by 5 V pulse and 12 V power supply.

Features
• Number of image sensing elements: 7500 elements × 4 line
• Image sensing element size: 5 µm × 5 µm on 5 µm centers
• Photo sensing region: High sensitive PN photodiode
• Distanced between photodiode array: Color (40 µm, 8 lines), B/W-color (60 µm, 12 lines)
• Clock: 2 phase (5 V)
• Power supply: 12 V power supply voltage
• Internal circuit: Clamp circuit
• Package: 22 pin CERDIP package
• Color filter: Red, green, blue

System Overview
The C8051F04x family of devices are fully integrated mixed-signal System-on-a-Chip MCUs with 64 digital I/O pins (C8051F040/2/4/6) or 32 digital I/O pins (C8051F041/3/5/7), and an integrated CAN 2.0B controller. Highlighted features are listed below; refer to Table 1.1 for specific product feature selection.

• High-Speed pipelined 8051-compatible CIP-51 microcontroller core (up to 25 MIPS)
• Controller Area Network (CAN 2.0B) Controller with 32 message objects, each with its own indentifier mask.
• In-system, full-speed, non-intrusive debug interface (on-chip)
• True 12-bit (C8051F040/1) or 10-bit (C8051F042/3/4/5/6/7) 100 ksps 8-channel ADC with PGA and analog multiplexer
• High Voltage Difference Amplifier input to the 12/10-bit ADC (60 V Peak-to-Peak) with programmable gain.
• True 8-bit 500 ksps 8-channel ADC with PGA and analog multiplexer (C8051F040/1/2/3)
• Two 12-bit DACs with programmable update scheduling (C8051F040/1/2/3)
• 64 kB (C8051F040/1/2/3/4/5) or 32 kB (C8051F046/7) of in-system programmable Flash memory
• 4352 (4096 + 256) bytes of on-chip RAM
• External Data Memory Interface with 64 kB address space
• SPI, SMBus/I2C, and (2) UART serial interfaces implemented in hardware
• Five general purpose 16-bit Timers
• Programmable Counter/Timer Array with six capture/compare modules
• On-chip Watchdog Timer, VDD Monitor, and Temperature Sensor

Description
The AV104-12 GaAs IC FET voltage variable attenuator provides 25 dB attenuation range at 900 MHz controlled by a single positive voltage.The VVA has a linear transfer curve of 5 dB/V slope, with input and output VSWR better than 1.4:1 over all states. Its attenuation range at 1900 MHz is 22 dB. It operates with supply voltage of +5 V and control voltage of 0 V to +5 V in a low cost SOIC-8 package. The RF ports require 25 pF DC blocking capacitors.

Features
■ Single Positive +5 V Control Voltage
■ 25 dB Attenuation Range @ 0.9 GHz
■ High IP3 (20 dBm @ 0.9 GHz)
■ Excellent Linearity Performance

[Silicon Laboratories]

System Overview
The C8051F04x family of devices are fully integrated mixed-signal System-on-a-Chip MCUs with 64 digital I/O pins (C8051F040/2/4/6) or 32 digital I/O pins (C8051F041/3/5/7), and an integrated CAN 2.0B controller. Highlighted features are listed below; refer to Table 1.1 for specific product feature selection.

• High-Speed pipelined 8051-compatible CIP-51 microcontroller core (up to 25 MIPS)
• Controller Area Network (CAN 2.0B) Controller with 32 message objects, each with its own indentifier mask.
• In-system, full-speed, non-intrusive debug interface (on-chip)
• True 12-bit (C8051F040/1) or 10-bit (C8051F042/3/4/5/6/7) 100 ksps 8-channel ADC with PGA and analog multiplexer
• High Voltage Difference Amplifier input to the 12/10-bit ADC (60 V Peak-to-Peak) with programmable gain.
• True 8-bit 500 ksps 8-channel ADC with PGA and analog multiplexer (C8051F040/1/2/3)
• Two 12-bit DACs with programmable update scheduling (C8051F040/1/2/3)
• 64 kB (C8051F040/1/2/3/4/5) or 32 kB (C8051F046/7) of in-system programmable Flash memory
• 4352 (4096 + 256) bytes of on-chip RAM
• External Data Memory Interface with 64 kB address space
• SPI, SMBus/I2C, and (2) UART serial interfaces implemented in hardware
• Five general purpose 16-bit Timers
• Programmable Counter/Timer Array with six capture/compare modules
• On-chip Watchdog Timer, VDD Monitor, and Temperature Sensor

OVERVIEW
The PythPits-series SMH-01B01-01 is a thermopile-type infrared array Sensor module that features an 8×8 array of Sensor elements to detect and convert the infrared energy within an area to a signal for output.
It is equipped with a Si-lens optical system, and features an MCU with built-in A/D converter that generates digital output, on an I2C interface, of both the converted emission temperature of each Sensor element and the ambient temperature from a temperature Sensor mounted on the Sensor chip.

FEATURES
◾ 8×8 structure, 64-element array
◾ Si lens optical system, approximately 35° total field-of-view angle (between peak value of elements on both sides)
◾ Gain switching for measurement extension up to 250°C using variable-gain preamplifier (25°C ambient temperature environment)
◾ Built-in auto range function automatically adjusts the gain to match the temperature within the area
◾ Switchable frame measurement speed: 4, 2, 1 fps
◾ Switchable voltage output and emission temperature conversion output
◾ Changeable data readout order: top/bottom reversal and left/right reversal to support horizontal/vertical rotation
◾ SMBUS standard PEC code support
◾ Emission temperature resolution: ±1.5°C
◾ Supply voltage: 5V ± 5%
◾ Current consumption: 5 mA (typ.)

A. General Specifications

1. Models matched to leading transceiver ICs

2. Return loss meets requirements of G.703

3. Operating temperature of -40°C to +85°C

4. 1500Vrms Isolation

B. Electrical Specifications@25°C :

1. Turn Ratio(PRI:SEC±5%) : 1:2CT

2. PRI . OCL @25°C: 40 µH Min @100KHz/0.2Vrms

3. PRI . OCL @-40°C: 19 µH Min @100KHz/0.2Vrms

4. L.L : 0.11µH Max @100KHz/0.2V

5. Cw/w : 12 pF Max

6. PRI/SEC Isolation:1500Vrms

7. Bandwidth with 75 Ω system:0.25 MHz~500 MHz(Typ)

8. Primary Pins : 4-6

TOSHIBA CCD Image Sensor CCD (charge coupled device)

The TCD2560D is a high sensitive and low dark Current 5400 elements × 3 line CCD color image Sensor which includes CCD drive circuit and clamp circuit. The Sensor is designed for scanner.
The device contains a row of 5400 elements × 3 line photodiodes which provide a 24 lines/mm (600 dpi) across a A4 size paper. The device is operated by 5 V pulse, and 12 V power supply.

Features
• Number of image sensing elements: 5400 elements × 3 line
• Image sensing element size: 5.25 µm by 5.25 µm on 5.25 µm centers
• Photo sensing region: High sensitive and low dark Current PN photodiode
• Distance between photodiode array: 42 µm (8 lines)
• Clock: 2 phase (5 V)
• Power supply: 12 V power supply voltage
• Internal circuit: Clamp circuit
• Package: 22 pin CERDIP package
• Color filter: Red, green, blue

FEATURES
✔ 350 Watts Peak Pulse Power per Line (tp=8/20µs)
✔ Protects 6 Unidirectional Lines: Pins 1, 2, 3, 4, 5, 8 to Data Lines, Pins 6 & 7 to Ground
✔ Protects 5 Bidirectional Lines: Pins 1, 2, 3, 4, 5 or 8 for Data Lines, Pins 5 or 8 to Ground, Pins 6 & 7 Open
✔ ESD Protection > 25 kilovolts
✔ Protects 5.0 Volt Components
✔ Monolithic Design
✔ RoHS Compliant

APPLICATIONS
✔ RS-232, RS-422 & RS-423 Data Lines
✔ Microprocessor Based Equipment
✔ Control & Monitoring Systems
✔ Portable Electronics
✔ Sensor Electronics