BU406D 데이터 시트보기 (PDF) - Wing Shing International Group

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BU406D

NPN EPITAXIAL SILICON TRANSISTOR

Wing Shing International Group 

BU406D

NPN EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE SWITCHING USE IN

HORIZONTAL DEFLECTION OUTPUT STAGE

TO-220

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Characteristic

Collector-Base Voltage

Collector-EmitterVoltage

Emitter-Base voltage

Collector Current (DC)

Collector Peck Current

Base Current (DC)

Collector Dissipation (Tc=25°C)

Junction Temperature

Storage Temperature

Symbol Rating

Unit

VCBO

400

V

VCEO

400

V

VEBO

6

V

IC

7

A

ICM

10

A

IB

4

A

PC

60

W

Tj

150

°C

Tstg

-65~150

°C

ELECTRICAL CHARACTERISTICS (Ta=25°C)

Characterristic

Collector Cutoff Current (VBE=0)

Emitter Cutoff Current(IC=0)

Collector Emitter Saturation Voltage

Base- Emitter Saturation Voltage

Current Gain Bandwith Product

Turn-Off Time

Symbol

Test Condition

Min Typ Max

ICES

VCE= 400V , VEB= 0

5

IEBO

VEB= 6V , IC=0

1

VCE(sat) IC=5A, IB=0.5A

1.2

VBE(sat) IC=5A, IB=1.2A

1.5

fT

VCE= 10V, IC=500mA 10

toff

IC=5A, IB=0.5A

0.75

IC=5A, IB=0.8A

0.4

IC=6A, IB=1.2A

0.4

Unit

mA

mA

V

MHZ

µS

µS

µS

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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