P4C187-25LMB 데이터 시트보기 (PDF) - Performance Semiconductor

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P4C187-25LMB

ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS

Performance Semiconductor 

P4C187/187L

TIMING WAVEFORM OF WRITE CYCLE NO. 2 (CE CONTROLLED)(9)

ADDRESS

CE

WE

DATA IN

(11)

t WC

t AS

t CW

t AW

t WP

t AH

t WR

t DW

t DH

DATA VALID

DATA OUT

HIGH IMPEDANCE

AC TEST CONDITIONS

Input Pulse Levels

GND to 3.0V

Input Rise and Fall Times

3ns

Input Timing Reference Level

1.5V

Output Timing Reference Level

1.5V

Output Load

See Figures 1 and 2

TRUTH TABLE

Mode

CE

WE

Standby H

X

Read

L

H

Write

L

L

Output

High Z

DOUT

High Z

Power

Standby

Active

Active

DOUT

255Ω

+5V

480Ω

30pF* (5pF* for t HZ , t LZ ,

t WZ and tOW )

D OUT

RTH = 166.5 Ω

VTH = 1.73 V

30pF* (5pF* for t HZ , t LZ ,

t WZ and tOW )

Figure 1. Output Load

* including scope and test fixture.

Note:

Due to the ultra-high speed of the P4C187/L, care must be taken when

testing this device; an inadequate setup can cause a normal functioning

part to be rejected as faulty. Long high-inductance leads that cause

supply bounce must be avoided by bringing the VCC and ground planes

directly up to the contactor fingers. A 0.01 µF high frequency capacitor

is also required between VCC and ground. To avoid signal reflections,

Figure 2. Thevenin Equivalent

proper termination must be used; for example, a 50Ω test environment

should be terminated into a 50Ω load with 1.73V (Thevenin Voltage) at

the comparator input, and a 116Ω resistor must be used in series with

DOUT to match 166Ω (Thevenin Resistance).

60

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