2N6426_D74Z 데이터 시트보기 (PDF) - Fairchild Semiconductor

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2N6426_D74Z

NPN Darlington Transistor

Fairchild Semiconductor 

NPN Darlington Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

V(BR)EBO

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 mA, IB = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 30 V, IE = 0

VCE = 25 V, IB = 0

VEB = 10 V, IC = 0

40

V

40

V

12

V

50

nA

1.0

µA

50

nA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

VCE = 5.0 V, IC = 10 mA

VCE = 5.0 V, IC = 100 mA

VCE = 5.0 V, IC = 500 mA

IC = 50 mA, IB = 0.5 mA

IC = 500 mA, IB = 0.5 mA

IC = 500 mA, IB = 0.5 mA

IC = 50 mA, VCE = 5.0 V

20,000 200,000

30,000 300,000

20,000 200,000

1.2

V

1.5

V

2.0

V

1.75

V

SMALL SIGNAL CHARACTERISTICS

Cob

Output Capacitance

Cib

Input Capacitance

hfe

Small-Signal Current Gain

hie

Input Impedance

hoe

Output Admittance

NF

Noise Figure

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCB = 10 V, IE = 0, f = 1.0 MHz

VEB = 1.0 V, IC = 0, f = 1.0 MHz

IC = 10 mA, VCE = 5.0 V,

f = 1.0 kHz

IC = 10 mA, VCE = 5.0 V,

f = 1.0 kHz

IC = 1.0 mA, VCE = 5.0 V,

Rs = 100 kΩ,

f = 10 kHz to 15.7 kHz

20,000

100

7.0

15

2,000

1,000

10

pF

pF

kΩ

µmho

dB

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