OM360NK 데이터 시트보기 (PDF) - Omnirel Corp => IRF
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OM360NK Datasheet PDF : 4 Pages
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OM360NK - OM10N100NK
3.1
ELECTRICAL CHARACTERISTICS: OM360NK (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
Zero Gate Voltage Drain
(VDS = 400 V, VGS = 0)
(VDS = 400 V, VGS = 0, TJ = 125° C)
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
ON CHARACTERISTICS*
V(BR)DSS
400
IDSS
-
-
IGSSF
-
IGSSR
-
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 12 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 24 A)
(ID = 12 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 12 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
2.0
1.5
RDS(on)
-
VDS(on)
-
-
gFS
14
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
-
Coss
-
Crss
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 200 V, ID = 24 A,
Rgen = 4.3 ohms)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 320 V, ID = 24 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
-
tr
-
td(off)
-
tf
-
Qg
-
Qgs
-
Qgd
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 24 A, d/dt = 100 A/µs)
VSD
-
ton
-
trr
-
Typ.
-
-
-
-
-
3.0
-
-
-
-
-
4000
550
110
30
95
80
80
110
22
46
1.1
**
500
Max.
-
0.25
1.0
100
100
4.0
3.5
0.20
5.4
5.4
-
-
-
-
-
-
-
-
-
-
1.6
-
1000
Unit
Vdc
mAdc
nAdc
nAdc
Vdc
Ohm
Vdc
mhos
pF
ns
nC
Vdc
ns
ELECTRICAL CHARACTERISTICS: OM460NK (TC = 25° unless otherwise noted)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VGS = 0, ID = 0.25 mA)
V(BR)DSS
500
-
-
Vdc
Zero Gate Voltage Drain
IDSS
mAdc
(VDS = 500 V, VGS = 0)
-
-
0.25
(VDS = 500 V, VGS = 0, TJ = 125° C)
-
-
1.0
Gate-Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0)
IGSSF
-
-
100
nAdc
Gate-Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0)
IGSSR
-
-
100
nAdc
ON CHARACTERISTICS*
Gate-Threshold Voltage
(VDS = VGS, ID = 0.25 mAdc)
(TJ = 125° C)
Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 11 Adc)
Drain-Source On-Voltage (VGS = 10 Vdc)
(ID = 22 A)
(ID = 11 A, TJ = 125° C)
Forward Transconductance (VDS = 15 Vdc, ID = 11 Adc)
DYNAMIC CHARACTERISTICS
VGS(th)
RDS(on)
VDS(on)
gFS
Vdc
2.0
3.0
4.0
1.5
-
3.5
-
-
0.25
Ohm
Vdc
-
-
8.0
-
-
8.0
11
-
-
mhos
Input Capacitance
Output Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS
Ciss
Coss
Crss
-
4000
-
pF
-
480
-
-
95
-
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(VDD = 250 V, ID = 22 A,
Rgen = 4.3 ohms)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 22 A,
VGS = 10 V)
SOURCE DRAIN DIODE CHARACTERISTICS
td(on)
tr
Td(off)
tf
Qg
Qgs
Qgd
-
32
-
ns
-
95
-
-
80
-
-
80
-
-
115
-
nC
-
22
-
-
46
-
Forward On-Voltage
Forward Turn-On Time
Reverse Recovery Time
(IS = 22 A, d/dt =100 A/µs)
VSD
-
1.1
1.6
Vdc
ton
-
**
-
ns
trr
-
500
1000
* Indicates Pulse Test = 300 µsec, Duty Cycle = 2%. ** Limited by circuit inductance
3.1 - 38
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