BSS149 데이터 시트보기 (PDF) - Siemens AG

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BSS149

SIPMOS® Small-Signal Transistor

Siemens AG 

BSS 149

Gate threshold voltage VGS(th) = f (Tj)

parameter: VDS = 3 V, ID = 1 mA, (spread)

Forward characteristics of reverse diode

IF = f (VSD)

parameter: tp = 80 µs, Tj, (spread)

Drain current ID = f (TA)

parameter: VGS ≥ 3 V

Drain-source breakdown voltage

V(BR) DSS = b × V(BR)DSS (25 ˚C)

Semiconductor Group

6

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