VCR2N 데이터 시트보기 (PDF) - InterFET
부품명
상세내역
제조사
VCR2N Datasheet PDF : 1 Pages
| |||
C-8
01/99
VCR2N, VCR4N, VCR7N
N-Channel Silicon Voltage Controlled Resistor JFET
¥ Small Signal Attenuators
¥ Filters
¥ Amplifier Gain Control
¥ Oscillator Amplitude Control
Absolute maximum ratings at TA = 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 15 V
10 mA
300 mW
2.4 mW/°C
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V(BR)GSS
IGSS
VGS(OFF)
rds(on)
Cdg
Csg
VCR2N
NJ72
Min
Max
– 15
–5
– 1 – 3.5
VCR4N
NJ16
Min
Max
– 15
– 3.5
– 0.2
–7
Process
Unit
Test Conditions
V IG = – 1 µA, VDS = ØV
nA VGS = – 15V, VDS = ØV
V ID = – 1 µA, VDS = 10V
20
60
200
600
Ω VGS = ØV, ID = ØA
7.5
3
pF VDG = 10V, IS = ØA
7.5
3
pF VDG = 10V, ID = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage
Gate Reverse Current
Gate Source Cutoff Voltage
Dynamic Electrical Characteristics
Drain Source ON Resistance
Drain Gate Capacitance
Source Gate Capacitance
V(BR)GSS
IGSS
VGS(OFF)
rds(on)
Cdg
Csg
VCR7N
NJ01
Min
Max
– 15
– 2.5
– 0.1
–5
Process
Unit
Test Conditions
V IG = – 1 µA, VDS = ØV
nA VGS = – 15V, VDS = ØV
V ID = – 1 µA, VDS = 10V
4000
8000
1.5
1.5
Ω VGS = ØV, ID = ØA
pF VDG = 10V, IS = ØA
pF VDG = 10V, ID = ØA
f = 1 kHz
f = 1 MHz
f = 1 MHz
VCR2N & VCR4N
TOÐ18 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
VCR7N
TOÐ72 Package
See Section G for Outline Dimensions
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Share Link: 