IRF513 데이터 시트보기 (PDF) - Harris Semiconductor

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IRF513

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm, N-Channel Power MOSFETs

Harris Semiconductor 

Semiconductor

January 1998

IRF510, IRF511,

IRF512, IRF513

4.9A, and 5.6A, 80V and 100V, 0.54 and 0.74 Ohm,

N-Channel Power MOSFETs

Features

• 4.9A, and 5.6A, 80V and 100V

• rDS(ON) = 0.54Ω and 0.74Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF510

TO-220AB

IRF510

IRF511

TO-220AB

IRF511

IRF512

TO-220AB

IRF512

IRF513

TO-220AB

IRF513

NOTE: When ordering, include the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA17441.

Symbol

D

G

S

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1997

5-1

File Number 1573.2

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