RF1S540SM 데이터 시트보기 (PDF) - Harris Semiconductor
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RF1S540SM Datasheet PDF : 7 Pages
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IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Typical Performance Curves Unless Otherwise Specified (Continued)
50
80µs PULSE TEST
40
VGS = 10V
30
VGS = 8V
VGS = 7V
VGS = 6V
20
10
0
0
VGS = 5V
VGS = 4V
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
100
80µs PULSE TEST
DUTY CYCLE = 0.5% MAX
10
175oC
25oC
1
VDS ≥ 50V
0.1
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
1.0
80µs PULSE DURATION
0.8
3.0
VGS = 10V, ID = 28A
2.4
0.6
1.8
0.4
1.2
0.2
VGS = 10V
VGS = 20V
0
0
25
50
75
100
125
ID, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.6
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
1800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
1200
600
0
1
COSS
CRSS
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5-5
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