RF1S9640 데이터 시트보기 (PDF) - Intersil
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RF1S9640 Datasheet PDF : 7 Pages
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IRF9640, RF1S9640SM
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Sym-
bol Showing the Integral
Reverse
P-N Junction Diode
G
-
-
-11
A
D
-
-
-44
A
S
Source to Drain Diode Voltage (Note 2)
VSD
TJ = 25oC, ISD = -11A, VGS = 0V (Figure 13)
-
-
-1.5
V
Reverse Recovery Time
trr
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
-
300
-
ns
Reverse Recovery Charge
QRR
TJ = 150oC, ISD = -11A, dISD/dt = 100A/µs
-
1.9
-
µC
NOTES:
2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 9.8mH, RG = 25Ω, peak IAS = 11A. See Figures 15, 16.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-15
-10
-5
0
0
50
100
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.0110-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
t1, RECTANGULAR PULSE DURATION (s)
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-35
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