12NK80Z 데이터 시트보기 (PDF) - STMicroelectronics

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12NK80Z

N-channel 800 V, 0.65Ωtyp., 10.5 A Zener-protected SuperMESH™ Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247

STMicroelectronics 

Electrical characteristics

STB12NK80Z, STF12NK80Z, STP12NK80Z, STW12NK80Z

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD=10.5A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=10.5A,

di/dt = 100A/µs,

VDD=100V, Tj=150°C

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

10.5 A

-

42 A

-

1.6 V

635

ns

- 5.9

µC

18.5

A

Table 8. Gate-source zener diode

Symbol

Parameter

BVGSO

Gate-Source breakdown

voltage

Test conditions

Igs=±1mA

(Open drain)

Min Typ. Max. Unit

30

-

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

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Doc ID 9567 Rev 7

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