STD12NE06L 데이터 시트보기 (PDF) - STMicroelectronics
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STD12NE06L Datasheet PDF : 9 Pages
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STD12NE06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 30 V
ID = 8 A
RG = 4.7 Ω
VGS = 5 V
(see test circuit, figure 3)
VDD = 48 V ID = 16 A VGS = 5 V
Min.
Typ.
17
38
Max.
25
50
Unit
ns
ns
12
16
nC
6
nC
6
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 48 V
ID = 16 A
RG = 4.7 Ω
VGS = 5 V
(see test circuit, figure 5)
Min.
Typ.
9
18
30
Max.
12
25
45
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 12 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 16 A
VDD = 25 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
70
0.13
4
Max.
12
48
1.5
Unit
A
A
V
ns
µC
A
Safe Operating Area for
Thermal Impedance
3/9
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