STB80NF55-08-1 데이터 시트보기 (PDF) - STMicroelectronics

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STB80NF55-08-1

N-CHANNEL 55V - 0.0065 Ω- 80A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET

STMicroelectronics 

STP80NF55-08 - STB80NF55-08 - STW80NF55-08

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID (1)

ID (1)

IDM(2)

PTOT

Drain-source voltage (VGS = 0)

Gate- source voltage

Drain current (continuos) at TC = 25 °C

Drain current (continuos) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

Tj

Operating junction temperature

Tstg Storage temperature

1. Current limited package

2. Pulse width limited by safe operating area

Value

55

±20

80

80

320

300

2

-55 to 175

Unit

V

V

A

A

A

W

W/°C

°C

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

1. When mounted on 1 inch2 FR-4 board, 2 oz Cu

D2PAK

35(1)

Value

TO-220 TO-247

0.5

62.5

50

Unit

°C/W

°C/W

300

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Max value

Unit

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by Tj max)

40

A

Single pulse avalanche energy

EAS

(starting Tj = 25 °C, ID = IAR, VDD = 30 V)

1000

mJ

3/15

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