W15NK50Z 데이터 시트보기 (PDF) - STMicroelectronics

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W15NK50Z

N-channel 500V - 0.30Ω- 14A TO-220/FP/D2PAK/I2PAK/TO- 2 4 7 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 -

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM(1) Source-drain current (pulsed)

VSD(2) Forward on voltage

ISD=14A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD=14A,

di/dt = 100A/µs,

VDD=29V, Tj=150°C

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

14

A

56

A

1.6 V

428

ns

4.2

µC

20

A

6/19

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