STB100NF04(2007) 데이터 시트보기 (PDF) - STMicroelectronics

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STB100NF04
(Rev.:2007)

N-channel 40V - 0.0043Ω - 120A - TO-220 - D2PAK STripFET™ II Power MOSFET

STMicroelectronics 

STB100NF04 - STP100NF04

Electrical characteristics

Table 5. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM(1)

VSD(2)

Source-drain Current

Source-drain Current (pulsed)

Forward on Voltage

ISD=120A, VGS=0

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse recovery Current

ISD=120A, VDD=20V,

di/dt=100A/µs, Tj=150°C

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

120 A

480 A

1.3 V

75

ns

185

nC

5

A

5/17

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