STB160NF03L 데이터 시트보기 (PDF) - STMicroelectronics

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STB160NF03L

N-CHANNEL 30V - 0.0021Ω - 160A D2PAK STripFET™ POWER MOSFET

STMicroelectronics 

STB160NF03L

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

0.5

Rthj-amb Thermal Resistance Junction-ambient Max

62.5

Tl

Maximum Lead Temperature For Soldering Purpose

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

30

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±15V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

ID(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

On State Drain Current

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10 V, ID = 80 A

VGS = 5 V, ID = 80 A

VDS > ID(on) x RDS(on)max,

VGS = 10V

Min.

1

160

Typ. Max.

0.0021 0.0030

0.0042 0.0070

Unit

V

Ω

Ω

A

DYNAMIC

Symbol

gfs (1)

Parameter

Forward Transconductance

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS > ID(on) x RDS(on)max,

ID =80 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

210

5600

1720

310

Max.

Unit

S

pF

pF

pF

2/9

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