STB80NE03L-06-1 데이터 시트보기 (PDF) - STMicroelectronics
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STB80NE03L-06-1 Datasheet PDF : 9 Pages
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STB80NE03L-06 / STB80NE03L-06-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15 V, ID = 40 A
RG = 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 24 V, ID = 80A,
VGS = 5V
Min.
Typ.
40
260
95
30
44
Max.
55
350
130
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V, ID = 80 A,
RG = 4.7Ω, VGS = 5V
(see test circuit, Figure 3)
Min.
Typ.
70
165
250
Max.
95
220
340
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 80 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
75
0.14
4
Max.
80
320
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedence
3/9
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