STB160NF02L 데이터 시트보기 (PDF) - STMicroelectronics
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STB160NF02L Datasheet PDF : 7 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
Turn-on Delay Time
tr
Rise Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
td(off)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 10V, ID = 80A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
VDD = 16V, ID = 160A,
VGS = 10V
Test Conditions
VDD = 10V, ID = 80A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
Vclamp =16V, ID =40A
RG = 4.7Ω, VGS = 10V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (1) Source-drain Current (pulsed)
VSD (2) Forward On Voltage
ISD = 160A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 15V, Tj = 25°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STB160NF02L
Min. Typ. Max. Unit
30
ns
390
ns
130
nC
20
nC
54
nC
Min.
Typ.
100
90
Max.
Unit
ns
ns
105
ns
50
ns
100
ns
Min.
Typ.
90
225
5
Max.
160
640
1.3
Unit
A
A
V
ns
nC
A
3/7
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