IRF630 데이터 시트보기 (PDF) - STMicroelectronics
부품명
상세내역
일치하는 목록
IRF630 Datasheet PDF : 14 Pages
| |||
IRF630 - IRF630FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(2)
PTOT
dv/dt (3)
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
Peak diode recovery voltage slope
VISO
TJ
Tstg
Insulation winthstand voltage (DC)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤9A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Rthj-a
Rthc-sink
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Thermal resistance case-sink typ
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220
TO-220FP
200
200
± 20
9
5.7
36
9(1)
5.7(1)
36(1)
75
30
0.6
0.24
5
--
2000
-65 to 150
150
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
Value
Unit
TO-220
TO-220FP
1.67
62.5
0.5
4.17 °C/W
°C/W
°C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
9
A
160
mJ
3/14
Share Link: 