STB80NF12 데이터 시트보기 (PDF) - STMicroelectronics

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STB80NF12

N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET

STMicroelectronics 

STB80NF12 STW80NF12 STP80NF12 STP80NF12FP

THERMAL DATA

TO-247

Rthj-case Thermal Resistance Junction-case

Max 0.5

Rthj-amb Thermal Resistance Junction-ambient

Max 50

Tl

Maximum Lead Temperature For Soldering Purpose

300

D2PAK

TO-220

0.5

62.5

300

TO-220FP

3.33

62.5

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

120

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS

ID = 250 µA

VGS = 10 V

ID = 40 A

Min.

2

Typ. Max.

0.013 0.018

Unit

V

Ω

DYNAMIC

Symbol

gfs (*)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS = 15 V

ID = 40 A

VDS = 25V f = 1 MHz VGS = 0

Min.

Typ.

80

4300

600

230

Max.

Unit

S

pF

pF

pF

2/12

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