STB80NF10 데이터 시트보기 (PDF) - STMicroelectronics

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STB80NF10

N-channel 100 V, 0.012 Ω, 80 A, TO-220, D2PAK low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB80NF10, STP80NF10

(TCASE=25 °C unless otherwise specified)

Table 4. On/off states

Symbol

Parameter

Drain-source

V(BR)DSS breakdown voltage

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

drain current (VGS = 0)

Gate-body leakage

current (VDS = 0)

Gate threshold voltage

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS = 0

100

V

VDS = Max rating

VDS = Max rating @125°C

500 nA

10 µA

VGS = ±20 V

±100 nA

VDS = VGS, ID = 250 µA

2

3

4

V

VGS = 10 V, ID = 40 A

0.012 0.015 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1)

Ciss

Coss

Crss

Forward transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V , ID =40 A

VDS = 25 V, f = 1 MHz,

VGS = 0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 50 V, ID = 80 A,

VGS = 10 V

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Min.

-

Typ.

50

Max. Unit

S

5500

pF

-

700

pF

175

pF

135 182 nC

-

23

nC

51.3

nC

Table 6. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 50 V, ID= 40 A,

RG = 4.7 Ω, VGS=10 V

(see Figure 15)

Min. Typ.

26

80

-

116

60

Max. Unit

ns

ns

-

ns

ns

4/14

Doc ID 6958 Rev 18

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