BLF276 데이터 시트보기 (PDF) - Philips Electronics
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BLF276 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF power MOS transistor
Product specification
BLF276
APPLICATION INFORMATION FOR CLASS-B OPERATION
Tmb = 25 °C unless otherwise specified.
RF performance in CW operation in a common source class-B circuit.
MODE OF OPERATION
f
(MHz)
VDS
(V)
CW, class-B
225
50
IDQ
(mA)
50
108
50
50
Ruggedness in class-B operation
The BLF276 is capable of withstanding a load mismatch
corresponding to VSWR = 8 through all phases under the
following conditions:
VDS = 50 V; f = 225 MHz;
Tmb = 25 °C at rated load power.
PL
GP
ηD
(W)
(dB)
(%)
100
≥ 13
≥ 50
typ. 15
typ. 57
100
≥ 18
≥ 60
typ. 22
typ. 75
handbo2o0k, halfpage
gain
(dB)
16
gain
MRA937
100
η
(%)
80
12
60
η
8
40
4
20
0
0
20 40 60 80 100
Class-B operation; VDS = 50 V; IDQ = 50 mA;
f = 225 MHz.
0
120 140
PL (W)
Fig.9 Power gain and efficiency as functions of
load power, typical values.
handbPooLk1, 4h0alfpage
(W)
120
MRA942
100
80
60
40
20
0
0
2
4
6
8
PIN (W)
Class-B operation; VDS = 50 V; IDQ = 50 mA;
f = 225 MHz.
Fig.10 Load power as a function of input power,
typical values.
December 1997
6
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