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HMC283 데이터 시트보기 (PDF) - Hittite Microwave

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HMC283 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
v03.1007
HMC283
GaAs MMIC MEDIUM POWER
AMPLIFIER, 17 - 40 GHz
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a
tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C.
DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
3
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire (DC Bias) or ribbon bond (RF ports) 0.076mm
x 0.013mm (3 mil x 0.5 mil) size is recommended. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and
terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
HMC283 Alternate Applications:
HMC283 Frequency Multiplier Performance
5
HMC283 can also perform as a frequency multiplier. This is
accomplished by biasing Vgg1 into its pinchoff region –
typically -1V to -2V. By adjusting the Vg1 bias, the device will
2
operate as a doubler or tripler. Vgg2 may also be adjusted
to minimize the levels of unwanted harmonics. The plot
-1
shows the performance of HMC283 operated as a doubler
with Vgg1= -1V and the remaining gate voltages (Vgg2, 3, 4)
-4
set to -0.15V. In this condition the amplifier draws 310mA at
3.5V drain bias (Vdd) and provides +5dB to -5dB conversion
-7
loss dependent upon the output frequency.
+10 dBm
+15 dBm
+18 dBm
-10
10
15
20
25
30
35
40
OUTPUT FREQUENCY (GHz)
HMC283 Voltage Detector, Built-In-Test (B.I.T.)
By connecting the Vdet port to a 10K Ohm resistor and monitoring the voltage, a B.I.T. circuit can be created to monitor
changes in the device output power. This circuit is extremely well compensated for temperature variations as shown
in the first plot. The detected voltage does change with frequency and the second plot shows its variation.
3-8
1.6
1.4
1.2
1
0.8
0.6
0.4
+85 C
0.2
-55 C
+25 C
0
10
12
14
16
18
20
22
2
1.8
1.6
18 GHz
1.4
28 GHz
22 GHz
1.2
38 GHz
1
0.8
0.6
0.4
0.2
0
10
12
14
16
18
20
22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com

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