A92 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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A92 Datasheet PDF : 4 Pages
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A92
PNP Silicon Epitaxial Planar Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute maximum ratings (Ta=25°C)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-300
V
VCEO
Collector-Emitter Voltage
-300
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
500
mW
Tj,Tstg
Junction and Storage Temperature
-55 to 150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = -100μA , IE = 0
V(BR)CEO Collector-emitter breakdown voltage IC = -1 mA , IB = 0
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IE = -100μA , IC = 0
VCB = -200 V , IB = 0
VEB = -3 V , IC = 0
VCE = -10 V , IC = -1 mA
VCE = -10 V , IC = -10 mA
VCE = -10 V , IC = -30 mA
IC = -20 mA , IB = -2 mA
IC = -20 mA , IB = -2 mA
VCE = -20 V , IC = -10 mA
f = 100MHz
Cob
Collector output capacitance
VCB= -20V , IE = 0
f = 1MHz
MIN
-300
-300
-5
60
100
60
TYP
300
50
6
MAX
-0.25
-0.1
UNIT
V
V
V
μA
μA
-0.5
V
-0.9
V
MHz
pF
Publication Order Number: [A92]
© Bruckewell Technology Corporation Rev. A -2014
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