DPG10I400PM 데이터 시트보기 (PDF) - IXYS CORPORATION
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DPG10I400PM Datasheet PDF : 4 Pages
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DPG 10 I 400 PM
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG 10 I 400 PM
3
1
VRRM =
IFAV =
t rr =
400 V
10 A
45 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: isolated
Package:
● Housing: TO-220FP
●rIndustry standard outline
●rPlastic overmolded tab for
●r electrical isolation
●rIsolation Voltage 2500 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
IF =
IF =
400 V
400 V
10 A
20 A
10 A
20 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 10 A; VR = 270 V
-diF/dt = 200 A/µs
CJ
junction capacitance
VR = 150 V; f = 1 MHz
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 150°C
TC = 120°C
TVJ = 175°C
TC = 25°C
TVJ = 45°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
Ratings
min. typ. max. Unit
400 V
1 µA
0.15 mA
1.32 V
1.51 V
1.03 V
1.24 V
10 A
0.77 V
19.8 mΩ
4.40 K/W
-55
175 °C
35 W
150 A
4
A
6
A
45
ns
65
ns
15
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100125a
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