1SS193 데이터 시트보기 (PDF) - Unspecified

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1SS193

Silicon Epitaxial Planar Switching Diode

Unspecified 

Features

 Low Forward Voltage

 Fast Recovery Time

1SS193

Silicon Epitaxial Planar Switching Diode

SOT-23

3

1

2

1. Anode 2.N.C 3.Cathode

Marking Code：5D

3

12

Absolute Maximum Ratings (Ta=25℃ )

Parameter

Maximum Repetitive Reverse Voltage

Reverse Voltage

Average Rectified Forward Current

DC Forward Current

Symbol

VRRM

VR

IF(AV)

IFM

Value

85

80

100

300

Unit

V

V

mA

mA

Non-repetitive Peak Forward Surge Current

at t = 10 ms

IFSM

2

A

Total Device Dissipation

Operating Junction Temperature

Storage Temperature Range

Ptot

350

mW

TJ

150

℃

TSTG

- 55 to + 150

℃

Characteristics (Ta=25℃ )

Parameter

Forward Voltage

at IF = 1 mA

at IF = 10 mA

at IF = 100 mA

Reverse Current

at VR = 20 V

at VR = 75 V

Reverse Recovery Time

at IF = 10 mA, VR = 6 V, IRR = 1 mA, RL = 100 Ω

Total Capacitance

at VR = 0 V, f = 1 MHz

www.pingjingsemi.com

Revision：1.0 Apr-2019

Symbol

VF

IR

trr

CT

Min.

-

-

-

-

-

-

-

Typ.

0.6

0.72

0.9

-

-

-

-

Max.

-

-

1.2

0.1

0.5

4

4

Unit

V

µA

ns

pF

1/3

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