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A8732

Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger with IGBT Driver

Allegro MicroSystems 

A8732

Ultra Small Mobile Phone Xenon Photoflash

Capacitor Charger with IGBT Driver

ELECTRICAL CHARACTERISTICS (Continued) Typical values are valid at VIN = VBAT = 3.6 V; TA = 25°C, except indicates

specifications guaranteed from −40°C to 85°C ambient, unless otherwise noted

Switch On-Resistance

RSWDS(on) VIN_DRV = 3.6 V, ID = 600 mA, TA = 25°C

– 0.4 –

Ω

Switch Leakage Current

ISWLK

VSW = 5.5, over full temperature range

(note 1)

–

–

2

μA

CHARGE Pull-down Resistance

CHARGE Input Voltage

RCHGPD

VCHARGE

High, over input supply range (note 1)

Low, over input supply range (note 1)

– 100 –

kΩ

1.0 –

–

V

–

– 0.4 V

Charge Pin Programming

ILIM Programming High at CHARGE Pin

ILIM Programming Low at CHARGE Pin

Total ILIM Setup Time at CHARGE Pin

Switch-Off Timeout

Switch-On Timeout

Output Comparator Trip Voltage

Output Comparator Voltage Overdrive

¯D¯¯O¯¯N¯¯E¯ Leakage Current

¯D¯¯O¯¯N¯¯E¯ Output Low Voltage

dV/dt Threshold for ZVS Comparator

tILIM(H)init

tILIM(H)

tILIM(L)

tILIM(SU)

toff(max)

ton(max)

VOUTTRIP

VOUTOV

IDONELK

VDONEL

dV/dt

Initial Pulse (note 3)

Subsequent Pulses (note 3)

(note 3)

(note 3)

Measured as VSW – VBAT (note 4)

Pulse width = 200 ns (90% to 90%)

(note 1)

32 μA into ¯D¯¯O¯¯N¯¯E¯ pin (note 1)

Measured at SW pin

15

–

0.2 –

0.2 –

–

μs

–

μs

–

μs

– 200 –

μs

–

18

–

μs

–

18

–

μs

31 31.5 32

V

– 200 400 mV

1

μA

–

– 100 mV

–

20

– V/μs

IGBT Driver

TRIG Input Voltage

VTRIG(H)

VTRIG(L)

Input = logic high, over input supply range

(note 1)

Input = logic low, over input supply range

(note 1)

1.0 –

–

V

–

– 0.4 V

TRIG Pull-Down Resistor

RTRIGPD

GATE Resistance to VIN_DRV

RSrcDS(on) VGATE = 1.8 V

GATE Resistance to GND

RSnkDS(on) VGATE = 1.8 V

Propagation Delay (Rising)

tDr

Measurement taken at GATE pin,

CL= 6500 pF (notes 3, 5)

Propagation Delay (Falling)

tDf

(notes 3, 5)

Output Rise Time

tr

(notes 3, 5)

Output Fall Time

tf

(notes 3, 5)

GATE Pull-Down Resistor

RGTPD

1 Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization.

2Current limit guaranteed by design and correlation to static test.

3Guaranteed by design and characterization.

4Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization.

5See IGBT Drive Timing Definition diagram for further information.

– 100 –

kΩ

–

21

–

Ω

–

27

–

Ω

–

25

–

ns

–

60

–

ns

– 290 –

ns

– 380 –

ns

–

20

–

kΩ

Allegro MicroSystems, Inc.

5

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

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