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A8740

Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger with IGBT Driver

Allegro MicroSystems 

A8740

Ultra Small Mobile Phone Xenon Photoflash

Capacitor Charger with IGBT Driver

ELECTRICAL CHARACTERISTICS Typical values are valid at VIN = VBAT = 3.6 V; TA = 25°C, except

guaranteed from −40°C to 85°C ambient, unless otherwise noted

Characteristics

Symbol

Test Conditions

VBAT Voltage Range1

VIN_DRV Voltage Range1

UVLO Enable Threshold

UVLO Hysteresis

VBAT

VIN

VINUV

VINUV(hys)

VIN rising

Shutdown (CHARGE = 0 V, TRIG = 0 V)

VIN Supply Current

VBAT Pin Supply Current

IIN

Charging complete

Charging (CHARGE = VIN, TRIG = 0 V)

Shutdown (CHARGE = 0 V, TRIG = 0 V)

IBAT

Charging done (CHARGE = VIN,

¯D¯¯O¯¯N¯¯E¯ = 0 V)

Current Limit

Charging (CHARGE = VIN, TRIG = 0 V)

Primary-Side Current Limit2

Switch On-Resistance

Switch Leakage Current1

CHARGE Pull-down Resistance

CHARGE Input Voltage1

ISWLIM

RSWDS(on)

ISWLK

RCHGPD

VCHARGE

VIN_DRV = 3.6 V, ID = 600 mA, TA = 25°C

VSW = 5.5, over full temperature range

High, over input supply range

Low, over input supply range

CHARGE On/Off Delay

tCH

Time between CHARGE = 1 and charging

enabled

Switch-Off Timeout

Switch-On Timeout

Output Comparator Trip Voltage3

Output Comparator Voltage Overdrive

¯D¯¯O¯¯N¯¯E¯ Output Leakage Current1

¯D¯¯O¯¯N¯¯E¯ Output Low Voltage1

dV/dt Threshold for ZVS Comparator

toff(max)

ton(max)

VOUTTRIP

VOUTOV

IDONELK

VDONEL

dV/dt

Measured as VSW – VBAT

Pulse width = 200 ns (90% to 90%)

32 μA into ¯D¯¯O¯¯N¯¯E¯ pin

Measured at SW pin

IGBT Driver

TRIG Input Voltage1

VTRIG(H)

VTRIG(L)

Input = logic high, over input supply range

Input = logic low, over input supply range

TRIG Pull-Down Resistor

RTRIGPD

GATE Resistance to VIN_DRV

RSrcDS(on) VGATE = 1.8 V

GATE Resistance to GND

Propagation Delay (Rising)4,5

RSnkDS(on)

tDr

VGATE = 1.8 V

Measurement taken at ¯D¯¯O¯¯N¯¯E¯ pin,

CL= 6500 pF

Propagation Delay (Falling)4,5

tDf

Output Rise Time4,5

tr

Output Fall Time4,5

tf

GATE Pull-Down Resistor

RGTPD

1Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization.

2Current limit guaranteed by design and correlation to static test.

3Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization.

4Guaranteed by design and characterization.

5See IGBT Drive Timing Definition diagram for further information.

indicates specifications

Min. Typ. Max. Unit

1.5 – 5.5 V

2.3 – 5.5 V

– 2.05 2.2 V

– 150 – mV

– 0.02 0.5 μA

–

50 100 μA

–

2

– mA

– 0.01 1

μA

–

–

5

μA

–

–

50 μA

1.35 1.5 1.65 A

– 0.4 –

Ω

–

–

2

μA

– 130 –

kΩ

1.3 –

–

V

–

– 0.5 V

–

20

–

us

–

18

–

μs

–

18

–

μs

31.0 31.5 32.0 V

– 200 400 mV

–

–

1

μA

–

– 100 mV

–

20

– V/μs

1.3 –

–

V

–

– 0.5 V

– 130 –

kΩ

– 6.6 –

Ω

–

50

–

Ω

–

25

–

ns

–

60

–

ns

–

80

–

ns

– 700 –

ns

–

20

–

kΩ

Allegro MicroSystems, Inc.

4

115 Northeast Cutoff

Worcester, Massachusetts 01615-0036 U.S.A.

1.508.853.5000; www.allegromicro.com

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