2N5401 데이터 시트보기 (PDF) - Continental Device India Limited
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2N5401 Datasheet PDF : 3 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR
2N5401
TO-92
CBE
EBC
High Voltage PNP Transistor For General Purpose And Telephony Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
SYMBOL
VALUE
Collector -Emitter Voltage
VCEO
150
Collector -Base Voltage
VCBO
160
Emitter -Base Voltage
VEBO
5.0
Collector Current Continuous
IC
600
Power Dissipation @Ta=25 degC
PD
625
Derate Above 25 deg C
5.0
Power Dissipation @Tc=25 degC
PD
1.5
Derate Above 25 deg C
12
Operating And Storage Junction
Tj, Tstg
-55 to +150
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
83.3
Junction to Ambient
Rth(j-a)
200
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
TYP
Collector -Emitter Voltage
VCEO* IC=1mA,IB=0
150
-
Collector -Base Voltage
VCBO IC=100uA.IE=0
160
-
Emitter -Base Voltage
VEBO
IE=10uA, IC=-0
5.0
-
Collector-Cut off Current
ICBO
VCB=160V, IE=0
-
-
UNIT
V
V
V
mA
mW
mw/deg C
W
mw/deg C
deg C
deg C/W
deg C/W
MAX
-
-
-
50
UNIT
V
V
V
nA
Ta=100 deg C
VCB=160V, IE=0
-
Emitter-Cut off Current
IEBO
VEB=4V, IC=0
-
DC Current Gain
hFE*
IC=1mA,VCE=5V
50
IC=10mA,VCE=5V
60
IC=50mA,VCE=5V
50
Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA
-
IC=50mA,IB=5mA
-
Base Emitter Saturation Voltage
VBE(Sat) * IC=10mA,IB=1mA
-
IC=50mA,IB=5mA
-
-
50
uA
-
50
nA
-
-
-
240
-
-
-
0.2
V
-
0.5
V
-
1.0
V
-
1.0
V
Continental Device India Limited
Data Sheet
Page 1 of 3
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