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CSD362
Total power dissipation up to TC = 25°C
Ptot
Junction temperature
Tj
Storage temperature
Tstg
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 100 V
Breakdown voltages
IC = 20 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 5 A; IB = 0.5 A
D.C. current gain
IC = 5 A; VCE = 5 V**
ICBO
VCEO
VCBO
VEBO
VCEsat
VBEsat
hFE
Transition frequency
IC = 0.5 A; VCE = 5 V
fT
** hFE classification: N: 20-50 R: 40-80 O: 70-140
max. 40 W
max. 150 ºC
–65 to +150 ºC
max. 20 µA
min. 70 V
min. 150 V
min. 8.0 V
max. 1.0 V
max. 1.5 V
min. 20
max. 140
typ. 10 MHz
Continental Device India Limited
Data Sheet
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