BDX66 데이터 시트보기 (PDF) - SavantIC Semiconductor

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BDX66

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BDX66

DESCRIPTION

·With TO-3 package

·High current

·DARLINGTON

APPLICATIONS

·Designed for power amplification and

switching applications.

PINNING (See Fig.2)

PIN

DESCRIPTION

1

Base

2

Emitter

3

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25 )

SYMBOL

PARAMETER

VCBO

Collector-base voltage

VCEO

Collector-emitter voltage

VEBO

IC

Emitter-base voltage

Collector current

ICM

Collector current(peak)

IB

Base current

PT

Total power dissipation

Tj

Junction temperature

Tstg

Storage temperature

CONDITIONS

Open emitter

Open base

Open collector

TC=25

VALUE

-60

-60

-5

-16

-20

-0.25

150

-55~200

-55~200

UNIT

V

V

V

A

A

A

W

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance from junction to case

MAX

1.17

UNIT

/W

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