BDX66 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
부품명
상세내역
일치하는 목록
BDX66 Datasheet PDF : 3 Pages
| |||
PNP DARLINGTON
SILICON POWER TRANSISTOR
BDX 66, A, B, C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
BDX66
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IC = -100mA
BDX66A
BDX66B
BDX66C
ICEO
ICBO
IEBO
VCE(sat)(1)
VBE(1)
VF
hFE(1)
Collector Cut-Off Current
Collector-Base Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
Diode Forward Voltage
Forward-current transfer
ratio
VCE =0.5×VCEO(max)
IB =0
IE = 0
VCB =VCBO(max)
IE = 0
VCB = -40V
VCB = -50V
BDX66
BDX66A
TJ =200°C
VCB = -60V
VCB = -70V
BDX66B
BDX66C
VEB = -5V
IC = 0
IC = -10A
IB = -40mA
IC = -10A
IF = 10A
VCE = -3V
VCE = -3V
IC = -1.0A
IC = -10A
IC = -16A
Min.
-60
-80
-100
-120
1000
Typ.
2
2000
1000
Max.
-1.0
-1.0
-5
-5
-2
-2.5
Units
V
mA
V
-
DYNAMIC CHARACTERISTICS
hfe
Cobo
Magnitude of common
emitter small-signal short-
circuit forward current
transfer ratio
Output Capacitance
IC = -5A
f = 1.0MHz
VCB = -10V
f = 1.0MHz
VCE = -3V
50
-
IE = 0
300
pF
ton
Turn-On Time
toff
Turn-Off Time
IC = -10A
VCC = -12V
-IB1 = IB2 = 40mA
1.0
µS
3.5
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8760
Website: http://www.semelab-tt.com
Issue 1
Page 2 of 3
Share Link: 