MMBT4401 데이터 시트보기 (PDF) - Nanjing International Group Co
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MMBT4401 Datasheet PDF : 3 Pages
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MMBT4401
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 1 V, IC = 0.1 mA
at VCE = 1 V, IC = 1 mA
at VCE = 1 V, IC = 10 mA
at VCE = 1 V, IC = 150 mA
at VCE = 2 V, IC = 500 mA
Collector Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Base Emitter Saturation Voltage
at IC = 150 mA, IB = 15 mA
at IC = 500 mA, IB = 50 mA
Collector Cutoff Current
at VCB = 35 V
Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC= 0.1mA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 0.1 mA
Current Gain Bandwidth Product
at VCE = 10 V, IC = 20 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 5 V, IE = 0, f = 1 MHz
Emitter Base Capacitance
at VEB = 0.5 V, IC = 0, f = 1 MHz
Input Impedance
at IC = 1 mA, VCE = 10 V, f = 1 KHz
Voltage Feedback Ratio
at IC = 1 mA, VCE = 10 V, f = 1 KHz
Small Signal Current Gain
at IC = 1 mA, VCE = 10 V, f = 1 KHz
Output Admittance
at IC = 1 mA, VCE = 10 V, f = 1 KHz
Delay Time
Rise Time
VCC = 30 V, VEB = 2 V,
IC = 150 mA, IB1 = 15 mA
Storage Time
Fall Time
VCC = 30 V, IC = 150 mA,
IB1 = IB2 = 15 mA
Symbol
hFE
hFE
hFE
hFE
hFE
VCEsat
VCEsat
VBEsat
VBEsat
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
fT
Ccb
Ceb
hie
hre
hfe
hoe
td
tr
ts
tf
Min.
20
40
80
100
40
-
-
0.75
-
-
-
60
40
6
250
-
-
1
0.1
40
1
-
-
-
-
Max.
-
-
-
300
-
0.4
0.75
0.95
1.2
0.1
0.1
-
-
-
-
6.5
30
15
8
500
100
15
20
225
30
Unit
-
-
-
-
-
V
V
V
V
µA
µA
V
V
V
MHz
pF
pF
KΩ
X 10-4
-
µmhos
ns
ns
ns
ns
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