2SC5344 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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2SC5344 Datasheet PDF : 3 Pages
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Production specification
Silicon Epitaxial Planar Transistor
2SC5344
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
35
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=1mA,IB=0
30
V
Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=35V,IE=0
0.1 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation
voltage
Transition frequency
IEBO
VEB=5V,IC=0
hFE
VCE(sat)
VCE=1V,IC=100mA
IC=500mA, IB=50mA
fT
VCE=5V, IC= 10mA
0.1 μA
100
320
0.5 V
120
MHz
Output capacitance
Cob
VCB=10V, IE=0,f=1MHz
13
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
FAO
Y
160-320
FAY
C023
Rev.A
www.gmicroelec.com
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