ASB0230 데이터 시트보기 (PDF) - Anachip Corporation
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ASB0230 Datasheet PDF : 3 Pages
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SMD Schottky Barrier Diode
ASB0230
Maximum Rating (at TA=25ºC unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Unit
VRRM Repetitive peak reverse voltage
-
-
35
V
VR Reverse voltage
-
-
30
V
IO Average forward current
-
-
200 mA
IFSM
Forward current,
surge peak
0603 8.3ms single half sine-wave
-
2000
-
superimposed on rate load
1005 (JEDEC method)
-
3000
-
mA
PD Power Dissipation
0603
1005
-
-
-
-
150
250
mW
TSTG Storage temperature
-40
-
+125 ºC
Tj Junction temperature
-40
-
+125 ºC
Electrical Characteristics (at TA=25ºC unless otherwise noted)
Symbol
Parameter
VF
Forward voltage
IR
Reverse current
CT
Capacitance between
terminals
Conditions
IF=200mADC
VR=30V
F=1MHz, and 10 VDC reverse
voltage
Min. Typ. Max. Unit
-
-
0.50
V
-
-
30 µA
-
9
-
pF
Anachip Corp.
www.anachip.com.tw
Rev. 1.0 Aug 2, 2004
2/3
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