MBFH32S 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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MBFH32S

Schottky Bridge Rectifiers

Galaxy Semi-Conductor 

Schottky Bridge Rectifiers

Production specification

MBFH32S--MBFH34S

Features

 Metal silicon junction, majority carrier conduction

 High surge capability

 High temperature soldering guaranteed:

260°C/10 seconds

 High current capability, low forward voltage drop

 Guarding for over voltage protection

 RoHS Compliant

Mechanical Data

 Case: MBF molded plastic

 Molding compound, UL flammability classification rating 94V-0

 Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD22-B102

 Polarity indicator: As marked on body

Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol MBFH32S MBFH33S

Peak repetitive reverse voltage

V RRM

20

30

RMS reverse voltage

V RMS

14

21

DC blocking voltage

V DC

20

30

Maximum average forward output current

I F(AV)

3.0

Peak forward surge current,

8.3ms single half-sine-wave

I FSM

80

MBFH34S

40

28

40

Units

V

V

V

A

A

Thermal Characteristics

Parameter

Symbol MBFH32S MBFH33S MBFH34S

R ΘJA

72

Typical thermal resistance Per Diode

(Note 1)

R ΘJC

31

R ΘJL

15

Operating junction temperature range

TJ

- 55 ---- + 150

Storage temperature range

T STG

- 55 ---- + 150

Note:

1. Device mounted on PCB with 10 mm x 20 mm x 0.1mm copper pad areas

Units

°C /W

°C

°C

MBF714AA

Rev.B

www.gmesemi.com

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