MBF10J 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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MBF10J

Silicon Bridge Rectifiers

Galaxy Semi-Conductor 

Silicon Bridge Rectifiers

Production specification

MBF10J--MBF10M

Electrical Characteristics (@TA = 25°C unless otherwise specified)

Parameter

Symbol

Test conditions

Typ.

Max.

Maximum instantaneous

forward voltage

VF

IF=1.0A Per Diode

--

1.15

Rated VR,

@TA=25°C

--

5

Maximum Reverse current

IR

Per Diode

@TA=125°C

--

100

Units

V

μA

MBF701AA

Rev.B

www.gmesemi.com

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