BR24T1MFJ-3AM 데이터 시트보기 (PDF) - ROHM Semiconductor
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BR24T1MFJ-3AM Datasheet PDF : 32 Pages
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BR24T1M-3AM
2. Notes on Write Cycle Continuous Input
List of numbers of page write
Page Size
256Byte
Product Number
BR24T1M-3AM
The above numbers are maximum bytes for respective types.
Any bytes below these can be written.
In the case BR24T1M-3AM, 1 page=256bytes, but the page
write cycle time is 5ms at maximum for 256byte bulk write.
It does not stand 5ms at maximum × 256byte=1280ms(Max)
3. Internal Address Increment
Page write mode (in the case of BR24T1M-3AM）
WA16
0
0
0
WA8 WA7 WA6 WA5 WA4 WA3 WA2 WA1 WA0
000000000
000000001
000000010
Increment
Datasheet
FEh 0
0
0
011111110
011111111
0
0000000
For example, when it is started from address FEh,
then, increment is made as below,
FEh→FFh→00h→01h･･･ please take note.
Significant bit is fixed.
No digit up
※FEh･･･FE in hexadecimal, therefore, 11111110 becomes a
binary number.
4. Write Protect (WP) Terminal
Write protect (WP) function
When WP terminal is set at Vcc (H level), data rewrite of all addresses is prohibited. When it is set GND (L level), data
rewrite of all address is enabled. Be sure to connect this terminal to Vcc or GND, or control it to H level or L level. Do
not leave it open.
In case of using it as ROM, it is recommended to connect it to pull up or Vcc. At extremely low voltage at power
ON/OFF, by setting the WP terminal ‘H’, write error can be prevented.
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TSZ22111・15・001
16/28
TSZ02201-0GFG0G100430-1-2
08.Jul.2016 Rev.001
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