BYG10D(2018) 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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BYG10D Datasheet PDF : 2 Pages
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Characteristics
Forward voltage
Durchlass-Spannung
Tj = 25°C
IF = 1 A
IF = 1.5 A
Leakage current
Sperrstrom
Tj = 25°C
Tj = 125°C
VR = VRRM
Reverse recovery time
Sperrverzug
IF = 0.5 A through/über
IR = 1 A to IR = 0.25 A
Typ. thermal resistance junction-ambient − Typ. Wärmewiderstand Sperrschicht-Umgebung
Typ. thermal resistance junction-terminal − Typ. Wärmewiderstand Sperrschicht-Anschluss
BYG10D ... BYG10M
Kennwerte
VF
< 1.1 V
< 1.15 V
IR
< 5 µA
< 50 µA
trr
typ. 1500 ns
RthA
100 K/W 1)
RthT
30 K/W
120
[%]
100
80
60
40
20
IFAV
0
0 TT 50
100
150 [°C]
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
102
[µA]
101
1
Tj = 125°C
Tj = 100°C
10-1
IR
Tj = 25°C
10-20
VRRM
40
60
80 100 [%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
101
[A]
Tj = 125°C
10
Tj = 25°C
1
10-1
IF
30a-(1a-1.1v)
10-20.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
25
[pF]
20
15
10
5
Cj
0
VR
[V]
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1 Mounted on P.C. board with 25 mm2 copper pads at each terminal
Montage auf Leiterplatte mit 25 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
http://www.diotec.com/
© Diotec Semiconductor AG
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