MMG2401NR2 데이터 시트보기 (PDF) - NXP Semiconductors.

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MMG2401NR2

Indium Gallium Phosphorus HBT

NXP Semiconductors. 

Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz

Characteristic

Symbol

Min

Typ

Max

Unit

Output Power at 1dB Compression

P1dB

24

26.5

—

dBm

Power Gain

(Pout = 19 dBm)

Error Vector Magnitude

(Pout = 19 dBm, 64 QAM/54 Mbps)

Total Current

(Pout = 19 dBm)

Quiescent Current

Bias Control Reference Current

(ICQ = 66 mA)

Gain Flatness

(Over 100 MHz)

Gp

26

EVM

—

ICtotal

—

IDCQ

—

Iref

—

GF

—

27.5

3

210

156

8.4

±0.2

29

dB

—

%

—

mA

—

mA

—

mA

—

dB

Gain Variation over Temperature

(--40 to 85°C)

—

—

±1

—

dB

Input Return Loss

IRL

—

--10

--7.5

dB

Reverse Isolation

—

—

--35

—

dB

Second Harmonic

(Pout = 19 dBm)

Third Harmonic

(Pout = 19 dBm)

Ramp--On Time (10--90%)

—

—

--45

—

dBc

—

—

--35

—

dBc

tON

—

100

—

ns

MMG2401NR2

2

RF Device Data

Freescale Semiconductor

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